2 Experiments
3 Result and discussion
4 Conclusions
Small ionic radius difference between Ge ion and Zn ion.
These characteristics lead to the expectation that it is much easier to change the electronic structure around the band edge.
- The effects of doping and substrate temperature on the structural and optical properties of the Ge doped ZnO films were investigated by XRD, XPS, UV, PL
- The XRD patterns show that Zn2GeO4 phase was formed in the films and the crystallization of ZnO deteriorates
- The enhancement of UV light emission at about 380nm may be caused by excitons which were formed at the interface between Zn2GeO4 and ZnO grains.
- The PL spectrum show that some Ge2+ should replace the Zn2+ positions during the Zn2GeO4 grains growth and form the Ge2+ luminescence centers in Zn2GeO4 grains.

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